Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics

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概要

• 論文の詳細を見る

• We review the fabrication technology and performance characteristics of optically pumped GaN-based vertical cavity surface emitting lasers (VCSELs). Two types of VCSELs with different microcavity structures are described. First type of VCSEL has a hybrid microcavity structure that consists of an epitaxially grown AlN/GaN distributed Bragg reflector (DBR), a GaN active layer with InGaN/GaN multiple quantum wells (MQWs), and a Ta2O5/SiO2 dielectric DBR. Second type of VCSEL has a dielectric DBR microcavity structure that has a similar InGaN/GaN MQWs active layer sandwiched in two dielectric DBRs formed by Ta2O5/SiO2 and TiO2/SiO2. Both types of VCSELs achieved laser action under optical pumping at room temperature with emission wavelength of 448 and 414 nm for hybrid DBR VCSEL and dielectric DBR VCSEL, respectively. Both lasers showed narrow emission linewidth with high degree of polarization and large spontaneous emission coupling factors of about $10^{-2}$. In addition, a high characteristic temperature of over 240 K was measured, and a distinct spatially inhomogeneous emission pattern was observed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-08-30

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Lu Tien-chang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• KAO Chih-Chiang

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Chen Jun-rong

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Lin Li-Fan

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinch 30010, Taiwan

• Wang Shing-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinch 30010, Taiwan

• Chu Jong-Tang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinch 30010, Taiwan

• Huang Gen-Sheng

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinch 30010, Taiwan

• Chen Shih-Wei

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinch 30010, Taiwan

• Kao Tsung-Ting

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinch 30010, Taiwan

• Kao Chih-Chiang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinch 30010, Taiwan

• Lu Tien-Chang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinch 30010, Taiwan

• Chen Jun-Rong

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinch 30010, Taiwan

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