Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth

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概要

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• In this study, a high-performance GaN-based light-emitting diode (LED) was achieved using a nanocolumn patterned sapphire substrate (NCPSS) with low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The surface roughness was evaluated by atomic force microscopy (AFM). The mechanisms of carrier localization in the GaN-based LED fabricated on NCPSS were discussed referring to the results obtained from the power-dependent photoluminescence measurements. Moreover, from the transmission electron microscopy (TEM) image, the threading dislocation densities (TDDs) through the GaN-based LED fabricated on NCPSS were found to be about 10 times lower than those fabricated on planar substrates. Finally, the internal quantum efficiency (IQE) of the GaN-based LED fabricated on NCPSS was as high as 48% at 30 mW, corresponding to a current of 20 mA, which is higher than that of a GaN-based LED fabricated on a planar sapphire substrate by 8%. The use of NCPSS is suggested to be effective for elevating the emission efficiency of the GaN-based LED owing to an improvement in crystal quality.

• 2010-10-25

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Lu Tien-chang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Wang Shing-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

• Chiu Ching-Hsueh

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Lin Da-Wei

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

• Li Zhen-Yu

  Department of Electronic Engineering, Faculty of Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan

• Chiu Chin-Hua

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

• Chao Chu-Li

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

• Tu Chia-Cheng

  Department of Electronic Engineering, Faculty of Engineering, Chung Yuan Christian University, Chungli 32023, Taiwan

• Chao Chu-Li

  Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan

• Kuo Hao-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

• Lu Tien-Chang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

• Chiu Ching-Hsueh

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

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