Fabrication of Whitely Luminescent Silicon-Rich Nitride Films by Atmospheric Pressure Chemical Vapor Deposition
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概要
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Silicon-rich nitride (SRN) films that can exhibit an intense white-light emission were fabricated by atmospheric pressure chemical vapor deposition. SRN films were deposited on Si substrates using gaseous SiH2Cl2 (DCS) and NH3 as the source materials for Si and N, respectively. The deposition temperature was kept at 850 °C, and H2 was used as the carrier gas with its flow rate modulated to maintain chamber pressure at 1 atm during the deposition. The optical properties of films obtained at various deposition times from 15 to 60 min were examined by photoluminescence (PL) measurement. An intense luminescence band (1.5–3.5 eV) was observed by the naked eye for all as-deposited samples. Besides, time-resolved PL exhibited a short radiative lifetime of about 1 ns for SRN films. Moreover, high resolution plan-view transmission electron microscopy demonstrated the existence of Si dots in SRN films with the dot sizes ranging from 2 to 6 nm and a dot density of about $4\times 10^{12}$/cm2. On the basis of the results obtained, we considered that the related luminescence mechanism for SRN films is connected to crystalline Si dots produced therein.
- 2008-06-25
著者
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Uen Wu-yih
Department Of Electronic Engineering Chung Yuan University
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Lin Chia-hung
Department Of Materials Science And Engineering Meijo University
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Li Zhen-Yu
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
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Li Zhen-Yu
Department of Electronic Engineering, Faculty of Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan
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Liao Sen-Mao
Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chungli 32023, Taiwan
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Huang Yen-Chin
Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chungli 32023, Taiwan
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Yang Tsun-Neng
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Lan Shan-Ming
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Huang Yu-Hsiang
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Lin Chia-Hung
Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chungli 32023, Taiwan
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Uen Wu-Yih
Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chungli 32023, Taiwan
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