Luminescence Mechanism of SiOx Films Grown by Atmospheric-Pressure Halide Chemical Vapor Deposition
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概要
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Strong red-light luminescence was exhibited by nonstoichiometric silicon oxide (SiOx) films grown by atmospheric-pressure halide chemical vapor deposition. The temperature-dependent photoluminescence (PL) measurements and theoretical calculation of emission energy demonstrated that the PL of our samples originated from the energy level of the interface between Si quantum dots (Si-QDs) and a SiO2 matrix. Moreover, the continuous-wave PL spectra showed that the PL intensity can be enhanced by thermal annealing in CO2 environment. The radiative lifetime determined from the time-resolved PL measurement was increased by increasing CO2 thermal annealing temperature. The high-resolution transmission electron microscopy showed single-crystalline Si-QDs embedded in the SiOx films. According to the results obtained, the emission peak of the PL spectra of the SiOx films was probably due to the energy level of the interface region transition, and the nonradiative centers (or dangling bond, defect center) can be passivated using CO2 thermal annealing.
- 2007-11-15
著者
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Uen Wu-yih
Department Of Electronic Engineering Chung Yuan University
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CHEN Meng-Chu
Institute of Nuclear Energy Research
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Lin Chia-hung
Department Of Materials Science And Engineering Meijo University
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Li Zhen-Yu
Department of Electronic Engineering, Faculty of Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan
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Shen Ji-Lin
Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023, Taiwan
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Yang Tsun-Neng
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Lan Shan-Ming
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Huang Yu-Hsiang
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Ku Chien-Te
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Chen Ying-Ru
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Lin Chia-Hung
Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chungli 32023, Taiwan
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Chen Meng-Chu
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Shen Ji-Lin
Department of Physics, Chung Yuan Christian University, Chung-Li, Taiwan
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Uen Wu-Yih
Department of Electronic Engineering, Faculty of Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan
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