Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence
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概要
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The junction temperatures of the three individual subcells of InGaP/InGaAs/Ge solar cells were measured using photoluminescence (PL) with three different excitation lasers. With the illumination of an extra xenon--mercury lamp, the linear relationship between the PL energy and the illumination level is clearly observed and advantageously used for deriving the junction temperature. Using the Varshni relationship between the PL peak energy and the heat-sink temperature allows us to determine the junction temperature in each subcell.
- 2011-09-25
著者
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Shu Gia-Wei
Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023, Taiwan
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Shen Ji-Lin
Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023, Taiwan
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Yang Min-De
Institute of Nuclear Energy Research, P. O. Box 3-11, Lungtan 32500, Taiwan
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Wu Chih-Hung
Institute of Nuclear Energy Research, P. O. Box 3-11, Lungtan 32500, Taiwan
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Chou Wu-Ching
Electrophysics Department, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Tung Chiun-Hsiang
Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023, Taiwan
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Tung Shr-Chang
Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023, Taiwan
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Su Po-Chen
Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023, Taiwan
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Ko Cheng-Hao
Graduate Institute of Automation and Control, National Taiwan University of Science and Technology, Taipei 10672, Taiwan
関連論文
- Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence
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