Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers
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概要
- 論文の詳細を見る
We studied the Raman scattering of the InN epilayers with rapid thermal annealing (RTA). The longitudianl optical (LO) phonon in Raman spectrum shifts toward lower frequency and increases asymmetric broadening as the RTA temperature is increased. We suggest that the formation of indium-related defects, such as metallic indium clusters or indium vacancies, are responsible for the change in the asymmetric ratio in the LO mode. The E2 (high) mode in the Raman spectrum does not exhibit significant change after RTA since the indium atom does not involve the E2 (high) mode.
- 2010-10-25
著者
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Chen Yang-fang
Department Of Physics National Taiwan University
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Huang Ying-Sheng
Electronic Engineering Department, National Taiwan University of Science and Technology, Taipei 10617, Taiwan
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Huang Ying-Sheng
Electronic Engineering Department, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
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Shu Gia-Wei
Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023, Taiwan
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Shen Ji-Lin
Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023, Taiwan
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Lin Tai-Yuan
Institute of Optoelectronic Science, National Taiwan Ocean University, Keelung 20224, Taiwan
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Yang Min-De
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan
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Tong Shih-Chang
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan
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Chou I-Tin
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan
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Lee Yueh-Chien
Electronic Engineering Department, Tung Nan Institute of Technology, Taipei 22202, Taiwan
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Shu Gia-Wei
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan
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Shen Ji-Lin
Department of Physics, Chung Yuan Christian University, Chungli 32023, Taiwan
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Chen Yang-Fang
Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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