Improvement of Material Quality of Multijunction Solar Cells by Rapid Thermal Annealing

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概要

• 論文の詳細を見る

• We studied the CW and time-resolved photoluminescence (PL), and spectral response of three-junction InGaP/InGaAs/Ge solar cells following rapid thermal annealing (RTA). The improvement of material quality in the InGaP active layer after RTA is evident from the PL and spectral response. If the annealing temperature is 300 °C, the 10 K PL intensity is maximum, which increases by about a factor of 30 compared with that of the untreated sample. We suggest that the removal of the phosphorus-vacancy-related complexes is responsible for improvement of the material quality after RTA. The photocurrent of the cell also increases following RTA if the incident photon energy is greater than ${\sim}1.8$ eV.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-06-25

著者

• Wu Chih-Hung

  Institute of Nuclear Energy Research, P. O. Box 3-11, Lungtan 32500, Taiwan

• Liu Yu-Kai

  Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan

• Shen Ji-Lin

  Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan

• Yang Min-De

  Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan

関連論文

• Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence
• Dependence of Biasing Voltage and Illumination Power on the Built-in Electric Field of InGaP Solar Cells
• Optical Characterization of CuInSe2 Thin Films Grown by Metal Organic Chemical Vapor Deposition
• Improvement of Material Quality of Multijunction Solar Cells by Rapid Thermal Annealing

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