Optical Characterization of CuInSe2 Thin Films Grown by Metal Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
We studied the photoluminescence (PL) in CuInSe2 thin films grown by metal organic chemical vapor deposition (MOCVD) using a Cu precursor and two gases. By X-ray diffraction (XRD) and PL analysis, we found that the best quality of CuInSe2 thin films can be obtained when the deposition time of the trimethylindium (TMI) gas is 30 min. The improvement of the quality of CuInSe2 thin films after rapid thermal annealing (RTA) is evident from the full width at half maximum (FWHM) of PL. The FWHM of the PL peak is minimum when the RTA temperature is 500 °C. It is found the binding energy of the impurity level in CuInSe2 thin films increases after RTA, revealing that the thermal stability of CuInSe2 thin films is improved after RTA.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Ko Cheng-hao
Department Of Electrical Engineering Yuan Ze University
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Hu Che-Hao
Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan
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Yang Tsun-Neng
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Lan Shan-Ming
Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
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Chen Chang-Tai
Department of Electrical Engineering, Yuan-Zi University, Chungli 320, Taiwan
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Yang Ming-Der
Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan
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Liu Yu-Kai
Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan
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Wang Jyh-Shyang
Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan
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Shen Ji-Lin
Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan
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Lin Jian-Shian
Advanced Manufacturing Core Technology Division, Mechanical and System Research Laboratories, Industrial Technology Research Institute, Chu-Tung 31040, Taiwan
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