Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate

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概要

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• In this study, we investigated high-efficiency InGaN/GaN light-emitting diodes (LEDs) grown on sapphire substrates with SiO2 nanorod arrays (NRAs) of different heights. The GaN film showed an improved crystal quality through X-ray diffraction (XRD) full-width at half-maximum (FWHM), photoluminescence (PL), and cathodoluminescence (CL) measurements. The light output power and internal quantum efficiency (IQE) of the fabricated LEDs were increased when compared with those of conventional LEDs. Transmission electron microscopy (TEM) images suggested that the voids between SiO2 nanorods and the stacking faults introduced during the nanoscale epitaxial lateral overgrowth (NELOG) of GaN can effectively reduce the threading dislocation density (TDD). We believe that the improvements could be attributed to both the enhanced light extraction by utilizing SiO2 NRAs and the improved crystal quality through the NELOG method. We found that the sample with SiO2 NRA structures of 200 nm height can increase the LED output power by more than 70% in our study.

• 2012-04-25

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Lu Tien-chang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• Zan Hsiao-wen

  Department Of Photonics And Institute Of Electro-optical Engineering And Display Institute National

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Chang Shih-pang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Lin Chien-chung

  Institute Of Photonic Systems College Of Photonics National Chiao-tung University

• Chiu Ching-Hsueh

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Li Zhen-Yu

  Department of Electronic Engineering, Faculty of Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan

• Yang Hung-Chih

  R&D Division, Epistar Co., Ltd., Science-based Industrial Park, Hsinchu 31040, Taiwan

• Tu Po-Min

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Tu Po-Min

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

• Jang Chung-Ying

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

• Yang Hung-Chih

  R&D Division, Epistar Co., Ltd., Science-based Industrial Park, Hsinchu 31040, Taiwan

• Chiu Ching-Hsueh

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

• Chang Chun-Yen

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

• Kuo Hao-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

• Lin Chien-Chung

  Institute of Photonic System, College of Photonics, National Chiao-Tung University, Guiren Township, Tainan County 71150, Taiwan

• Chiu Ching-Hsueh

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Lu Tien-Chang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

• Zan Hsiao-Wen

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Zan Hsiao-Wen

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

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