Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
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概要
- 論文の詳細を見る
The low-frequency noise characteristics of partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) in silicon-on-insulator technology at various temperatures were investigated. For floating-body devices, a Lorentzian-like noise overshoot is observed due to the floating-body effect. The noise overshoot is dependent on temperature and bias, and can be reduced using a source-to-body-connected structure. At high temperature or high drain bias, the $1/f$ noise will be observed, and it is temperature-independent due to the trap-induced mobility fluctuation in the channel.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-04-15
著者
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Huang Guo-wei
National Nano Device Laboratories
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CHEN Kun-Ming
National Nano Device Laboratories
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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Yeh Wen-kuan
Department Of Electrical Engineering National University Of Kaohsiung
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Hu Hsin-hui
Department Of Electronics Engineering National Chiao Tung University
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Hu Hsin-Hui
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Chang Chun-Yen
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Yeh Wen-Kuan
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
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