Systematic Analysis and Modeling of On-Chip Spiral Inductors for Complementary Metal Oxide Semiconductor Radio Frequency Integrated Circuits Applications

スポンサーリンク

概要

• 論文の詳細を見る

• In this work, a simplified model for on-chip spiral inductors was developed to accurately predict key parameters in the giga hertz range, i.e., peak quality factor $Q_{\text{peak}}$, frequency at peak quality factor $ f_{\text{peak}}$, and self-resonance frequency $ f_{\text{SR}}$. To save area on the test-key layout, inductors were laid out with a ground-signal-ground-signal-ground (GSGSG) pad structure. In addition, we used two conventional ground-signal-ground (GSG) probes to measure the inductors with the GSGSG pad structures to save the cost of GSGSG probes. Very good fits between the predicted and the measured data indicate the suitability of the model and the new pad structure.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• Fang Yean-kuen

  Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.

• YEH Ta-Hsun

  Realtek Semiconductor Corporation

• Yeh Wen-kuan

  Department Of Electrical Engineering National University Of Kaohsiung

• Chen S.

  Department Of Electronic Engineering National Chiao Tung University

• Tang Mao-chyuan

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation

• Tang Mao-Chyuan

  VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

• Fang Yean-Kuen

  VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

• Yeh Ta-Hsun

  Realtek Semiconductor Corporation, Hsinchu, Taiwan

関連論文

• Mechanism of Chemical Mechanical Planarization Induced Edge Corrosion of Copper Line for Cu/Low-k SiOC Interconnects
• Efficient Improvement on Device Performance for sub-90nm CMOSFETs
• An Efficient Mobility Enhancement Engineering on 65nm FUSI CMOSFETs using a Second CESL Process
• Systematic Analysis and Modeling of On-Chip Spiral Inductors for CMOS RFIC Application
• Mobility Modulation Technology Impact on Device Performance and Reliability for sub-90nm SOI CMOSFETs
• The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETs
• Width Effect on Hot-Carrier-induced Degradation for 90nm Partially Depleted SOI CMOSFET
• The Impact of Pad Test-Fixture for De-embedding on Radio-Frequency MOSFETs
• Effects of hot carriers on DC and RF performances of deep submicron PMOSFET for low-power and high frequency applications
• The Growth and Characterization of Silicon/Silicon Carbide Heteroepitaxial Films on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition
• A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress
• Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
• An Efficient Improvement for Barrier Effect of W-Filled Contact
• Comparison of Post-Weld Microstructures and Mechanical Properties of Electron-and Laser-Beam Weld 8090 Al-Li Alloy Plates
• Epitaxial Growth and Electrical Characteristics of β-SiC on Si by Low-Pressure Rapid Thermal Chemical Vapor Deposition
• Hot-Carrier-Induced Degradation on 0.1 μm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor
• Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide
• Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology
• A Novel Amorphous Silicon Double Barrier Homojunction Device with Negative Resistance
• Novel Amorphous-Crystallime Silicon Heterojunction Switching Devices with Bidirectional Switching Characteristics
• Amorphous Silicon Double-Injection Device with Gate-Controllable N-Type Negative Resistance
• A Novel Amorphous Silicon Doping Superlattice Device with a Controllable Gate
• High Current Density in Amorphous Silicon/Siliconcarbide Double-Barrier Resonant Tunneling Device on Aluminum/Silicon Substrate
• New Observations on Hot-Carrier Degradation in 0.1 μm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors : Semiconductors
• Runx2, Osx, and Dspp in Tooth Development
• Key Proteolytic Cleavage Site and Full-length Form of DSPP
• The Reliability Characteristics of Wafer-Level Chip-Scale Package under Various Current Stressing
• Effect of STI Stress Enhanced Boron Diffusion on Leakage and Vcc min of Sub-65nm node Low-Power SRAM
• Embedded Process and Characterization Analysis of Discrete Capacitor in Organic-Base Substrate
• Impacts of Layout Dimensions and Ambient Temperatures on Silicon Based On-Chip RF Interconnects
• Comparison of membrane proteins from benign and malignant human thyroid tissues by two-dimensional polyacrylamide gel electrophoresis
• 台湾の養殖エビにおけるウイルス病その他の主要疾病
• The production of malformations by use of a protease inhibitor (leupeptin) in rats : Abstracts of Papers Presented at the 29th Annual Meeting of the Japanese Teratology Society, Yamagata, Japan July 13 - 14
• Effect of Etch Stop Layer Stress on Negative Bias Temperature Instability of Deep Submicron p-Type Metal–Oxide–Semiconductor Field Effect Transistors with Dual Gate Oxide
• Extra Bonus on Transistor Optimization with Stress Enhanced Notched-Gate Technology for Sub-90 nm Complementary Metal Oxide Semiconductor Field Effect Transistor
• Efficient Mobility Enhancement Engineering on 65 nm Fully Silicide Complementary Metal–Oxide–Semiconductor Field-Effect-Transistors Using Second Contect Etch Stop Layer Process
• Investigation and Modeling of Stress Interactions on 90 nm Silicon on Insulator Complementary Metal Oxide Semiconductor by Various Mobility Enhancement Approaches
• Observation of Reliability of HfZrOX Gate Dielectric Devices with Different Zr/Hf Ratios
• A study of deposition single crystal SiCN thin film on porous silicon for ultraviolet light detecting applications
• New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's
• Tumor suppressor function of BCSC-1 in nasopharyngeal carcinoma
• Omphalocele diagnosed at 14 weeks of pregnancy : ABSTRACTS OF PAPERS PRESENTED at the TWENTY-SEVENTH ANNUAL MEETING of the JAPANESE TERATOLOGY SOCIETY TOKYO, JAPAN, JULY 17-18, 1987
• A Study of Relationship of Wafer Breakage vs. Wafer Edge Analysis
• 台湾の天然ヨシエビにおけるホワイトスポット病
• 台湾の養殖クルマエビにおけるイ***ーヘッド病様ウイルス感染
• Elucidating the Effects of Current Stress History on Reliability Characteristics by Dynamic Analysis
• Response of amoeboid and differentiating ramified microglia to glucocorticoids in postnatal rats : a lectin histochemical and ultrastructural study
• EXPERIENCE WITH BIOARTIFICIAL LIVER (BAL)
• TGFβ-1 Downregulates DMP-1 and DSPP in Odontoblasts
• Reliability and Characteristics of Wafer-Level Chip-Scale Packages under Current Stress
• 台湾の魚類から分離された4ビルナウイルスの特徴
• IMPROVEMENT OF THE ADHESION OF THE RESIN TO THE METAL SURFACE BY USING PLASMA JET
• Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses
• Stress Technology Impact on Device Performances and Reliability for $\langle100\rangle$ Sub-90 nm Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect-Transistors
• Width Effect on Hot-Carrier-Induced Degradation for 90 nm Partially Depleted SOI CMOSFETs
• Teratogenic effects of combined used of anti-kidney serum and E-64 in the rat : Abstracts of Papers Presented at the Thirtieth Annual Meeting of the Japanese Teratology Society Miyazaki, Japan, July 12-13, 1990
• ウシエビPenaeus monodonの組織からの細胞培養〔英文〕
• Hot-Carrier-Induced Degradation on 0.1 μm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• Investigation of the Relationship between Whole-Wafer Strength and Control of Its Edge Engineering
• β-SiC Photodiodes Prepared on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition
• An Efficient Improvement for Barrier Effect of W-filled Contact
• Systematic Analysis and Modeling of On-Chip Spiral Inductors for Complementary Metal Oxide Semiconductor Radio Frequency Integrated Circuits Applications
• Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
• 22pSM-8 The silicon-tungten ECAL for the ILD detector and its use in photon identification

もっと見る 閉じる

スポンサーリンク