The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETs
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Lai Chieh-ming
Institute Of Microelectronics National Cheng Kung University
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Syu Jia-wei
Department Of Electrical Engineering National University Of Kaohsiung
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Fang Yean-kuen
Institute Of Microelectronics National Cheng Kung University
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LIN Chien-Ting
Institute of Microelectronics, National Cheng Kung University
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YEH Wen-Kuan
Department of Electrical Engineering, National University of Kaohsiung
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SHIAU W.
United Microelectronics Corporation, Central R&D Division
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FANG Yean-Kuan
Institute of Microelectronics, National Cheng Kung University
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Yeh Wen-kuan
Department Of Electrical Engineering National University Of Kaohsiung
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Shiau W.
United Microelectronics Corporation Central R&d Division
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Fang Yean-kuan
Institute Of Microelectronics National Cheng Kung University
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Fang Yean-kuen
Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation
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Shiau W.
United Microelectronics Corporation (umc) Central R&d Division
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