Hot-Carrier-Induced Degradation on 0.1 μm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor

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概要

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• Hot-carrier-induced degradation of partially depleted silicon-on-insulator (SOI) complementary metal-oxide-semiconductor field-effect-transistors (CMOSFET)s at various applied voltages and temperatures was investigated with respect to 0.1 μm body-contact (BC-SOI) and floating-body (FB-SOI) devices with 2 nm gate oxide. In our experiment, it is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) and the parasitic bipolar transistor effect (PBT) affect the hot-carrier-induced degradation of device characteristics. For FB-SOI nMOSFET maximum hot-carrier-induced degradation is inversely temperature dependent compared to BC-SOI nMOSFET. Without apparent FBE on pMOSFET, the worst hot-carrier stress condition and temperature dependence of maximum hot-carrier-induced degradation are similar for both 0.1 μm SOI pMOSFETs.

• 2003-04-15

著者

• Fang Yean-kuen

  Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.

• Yeh Wen-kuan

  Department Of Electrical Engineering National University Of Kaohsiung

• Yang Fu-liang

  Taiwan Semiconductor Manufacturing Company

• Wang Wen-han

  Vlsi Technology Laboratory Institute Of Microelectronics Department Of Electrical Engineering Nation

• Wang Wen-Han

  VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

• Yeh Wen-Kuan

  Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu Dist. 811, Kaohsiung, Taiwan

• Yang Fu-Liang

  Taiwan Semiconductor Manufacturing Company, Exploratory Device Dept., Device Engineering Division, Science-Based Industrial Park, Hsin-Chu, Taiwan

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