Strain Efficiency Enhancement with Stress Intermedium Engineering (SIE) for Sub-65nm CMOS Scaling
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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CHEN Shih-Chang
Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park
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Tao Han-jan
Taiwan Semiconductor Manufacturing Company
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Yang Fu-liang
Taiwan Semiconductor Manufacturing Company Exploratory Device Dept. Device Engineering Division Scie
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Yang Fu-liang
Taiwan Semiconductor Manufacturing Company
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Chen Shih-chang
Taiwan Semiconductor Manufacturing Company
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CHEN Hung-Ming
Taiwan Semiconductor Manufacturing Company
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HUANG Chien-Chao
Taiwan Semiconductor Manufacturing Company
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HWANG Jiunn-Ren
Taiwan Semiconductor Manufacturing Company
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CHANG Chang-Yun
Taiwan Semiconductor Manufacturing Company
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SHEU Yi-Ming
Taiwan Semiconductor Manufacturing Company
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YANG Ming-Yi
Taiwan Semiconductor Manufacturing Company
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WEN Cheng-Kuo
Taiwan Semiconductor Manufacturing Company
関連論文
- Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
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- New Observations on Hot-Carrier Degradation in 0.1 μm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors : Semiconductors
- Strain Efficiency Enhancement with Stress Intermedium Engineering (SIE) for Sub-65nm CMOS Scaling
- Effect of Strain on Static and Dynamic NBTI of pMOSFETs
- SOI Transistor/Power Scaling and Scaling-Strengthened Strain
- Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain
- Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
- Hot-Carrier-Induced Degradation on 0.1 μm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor