Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-08-15

著者

• Liang M‐s

  Taiwan Semiconductor Manufacturing Co. Hsinchu Twn

• Chen S‐c

  Industrial Technol. Res. Inst. Hsinchu Twn

• Chen Shih-chang

  Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company

• CHEN Mao-Chieh

  Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University

• LIANG Mong-Song

  Taiwan Semiconductor Manufacturing Co., Ltd.

• HSU Wei-Cheng

  Department of Electronics Engineering, National Chiao Tung University

• CHEN Shih-Chang

  Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park

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• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
• Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
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• An Efficient Improvement for Barrier Effect of W-filled Contact
• Effects of O2- and N2-Plasma Treatments on Copper Surface
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• Formation of NiSi-Silicided p+n Shallow Junctions by BF2+ Implantation into/through Silicide and Rapid Thermal Annealing
• Formation and Characterization of NiSi-Silicided n+p Shallow Junctions

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