InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Chang C‐s
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Su Y‐k
National Cheng Kung Univ. Tainan Twn
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CHANG Shoou-Jinn
Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology,
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Lo Hsin-ming
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Chen S‐c
Industrial Technol. Res. Inst. Hsinchu Twn
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Chen Shih-chang
Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company
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SHEI Shih-Chang
South Epitaxy Corporation
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CHANG Chia-Sheng
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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SU Yan-Kuin
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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LO Hsin-Ming
South Epitaxy Corporation
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LIU Chun-Hsing
Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology
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CHIOU Yu-Zung
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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LIN Yi-Chao
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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HSU Yu-Pin
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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KE Jung-Chin
South Epitaxy Corporation
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CHEN Shih-Chih
Department of Electronic Engineering, National Yunlin University of Science and Technology
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Chiang C‐i
Materials R&d Center Chung Shan Inst. Sci. & Technol. Taoyuan Twn
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Liu C‐h
Nan Jeon Inst. Of Technol. Yan‐hsui Twn
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Chen S‐c
Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company
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Chang S‐j
Department Of Electrical Engineering National Cheng-kung University
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