Mechanism of Threshold Voltage Shift (ΔV_<th>) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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Liu C‐h
Nan Jeon Inst. Of Technol. Yan‐hsui Twn
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Wann Clement
Ibm Microelectronics Division
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Lee Ming
United Microelectronics Corp.
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Rovedo Nivo
Ibm Microelectronics Division
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Yang Zhaohe
National Laboratory Of Crystal Materials And Institute Of Crystal Materials Shandong University
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LIU Chuan-Hsi
United Microelectronics Corp.
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LIN Chih-Yung
United Microelectronics Corp.
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CHEN Jenkon
United Microelectronics Corp.
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LOH Y.T.
United Microelectronics Corp.
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LIOU Fu-Tai
United Microelectronics Corp.
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SCHRUEFER Klaus
Infineon Technologies Corp.
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KATSETOS Anastasios
IBM Microelectronics Division
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YANG Zhijian
IBM Microelectronics Division
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HOOK Terence
IBM Microelectronics Division
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CHEN Tze-Chiang
IBM Microelectronics Division
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Yang Zuoya
Ibm Microelectronics Division
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Lin Chin-Yung
United Microelectronics Corp.
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