InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO_2 Layers
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Chang C‐s
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Su Y‐k
National Cheng Kung Univ. Tainan Twn
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CHANG Shoou-Jinn
Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology,
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SU Yan-Kuin
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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CHANG Ping-Chuan
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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CHEN Chin-Hsiang
Department of Electronic Engineering, Cheng Shiu University
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CHEN Po-Chang
Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology
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JHOU Yi-De
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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LIU Chun-Hsing
Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology
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HUNG Hung
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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WANG Shih-Ming
Department of Electronic Engineering, National Yunlin University of Science and Technology
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Chiang C‐i
Materials R&d Center Chung Shan Inst. Sci. & Technol. Taoyuan Twn
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Liu C‐h
Nan Jeon Inst. Of Technol. Yan‐hsui Twn
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Chang S‐j
Department Of Electrical Engineering National Cheng-kung University
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