High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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Chang C‐s
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Su Y‐k
National Cheng Kung Univ. Tainan Twn
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CHANG Shoou-Jinn
Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology,
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CHANG Chia-Sheng
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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SU Yan-Kuin
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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WANG Chun-Kai
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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CHIOU Yu-Zung
Department of Electronics Engineering Southern Taiwan University of Technology
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KUO Cheng-Huang
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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LIN Tien-Kun
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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KO Tsun-Kai
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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TANG Jing-Jou
Department of Electronics Engineering Southern Taiwan University of Technology
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Chiang C‐i
Materials R&d Center Chung Shan Inst. Sci. & Technol. Taoyuan Twn
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Chang S‐j
Department Of Electrical Engineering National Cheng-kung University
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- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
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