Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions

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概要

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• Low frequency noise of AlGaN/GaN metal–oxide–semiconductor heterostructure field effect transistors (MOS-HFETs) with photo-chemical vapor deposition (photo-CVD) SiO2 gate oxide was investigated as functions of gate bias (from $V_{\text{gs}}=-6$ to 4 V) both in the linear ($V_{\text{ds}}=3$ V) and saturation ($V_{\text{ds}}=12$ V) regions. In the linear region, it was found the measured noise spectra were fitted well by the $1/ f$ law up to 1 kHz. The normalized noise power density of the MOS-HFETs was proportional to ${V_{\text{gs}}}^{-1}$ when $-4<V_{\text{gs}}<0$ V, and was independent of the gate voltage when $0<V_{\text{gs}}<4$ V. The Hooge's coefficient $\alpha$ was estimated to be around $10^{-3}$. In the saturation region, it was found that the measured noise power density decreased monotonically with the increase of gate voltage.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• WANG Chun-Kai

  Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University

• Chiou Yu-zung

  Department Of Electrical Engineering National Cheng Kung University

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• Gong Jeng

  Institute Of Electronic Engineering National Tsing Hua University

• Su Yan-kuin

  Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio

• Wang Chun-Kai

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Chiou Yu-Zung

  Department of Electronics Engineering, Southern Taiwan University of Technology, Tainan 710, Taiwan

• Su Yan-Kuin

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Chang Shoou-Jinn

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

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