Characteristics of Spike-Free Single and Double Heterostructure-Emitter Bipolar Transistors

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概要

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• In this study, we propose single and double heterostructure-emitter bipolar transistors (SHEBTs and DHEBT, respectively) with undoped spacers inserted on both sides of the base. The spike-free HEBT is achieved by solving Poisson's equation. The SHEBT and DHEBT with 100 Å spacers exhibit common-emitter current gains of 200 and 120, along with offset voltages of 80 and 50 mV, respectively. Meanwhile, the current gains of the passivated SHEBT and DHEBT reach 360 and 180, respectively. The passivated SHEBT with 100 Å spacer exhibits a current gain over unity at ultralow current densities of $10^{-5}$ A/cm2. Additionally, experimental results for different spacer thicknesses demonstrate that the 100 Å spacer yields the highest current gain.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• TANG Jing-Jou

  Department of Electronics Engineering Southern Taiwan University of Technology

• JONG Fuh-Cheng

  Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University

• Chiou Yu-zung

  Department Of Electrical Engineering National Cheng Kung University

• Chen Yeong-jia

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• LIN Yu-Shyan

  Department of Electrical Engineering, National Cheng Kung University

• Hsu Wei-chou

  Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn

• Hsu Wei-Chou

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan, Republic of China

• Tang Jing-Jou

  Department of Electronics Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Yung-Kang City, Tainan County 710, Taiwan, Republic of China

• Chiou Yu-Zung

  Department of Electronics Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Yung-Kang City, Tainan County 710, Taiwan, Republic of China

• Jong Fuh-Cheng

  Department of Electronics Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Yung-Kang City, Tainan County 710, Taiwan, Republic of China

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