GaN Photodetectors with Transparent Indium Tin Oxide Electrodes
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概要
- 論文の詳細を見る
Sputtering indium tin oxide (ITO) and e-beam ITO films deposited onto GaN as transparent electrodes for applications in metal–semiconductor–metal (MSM) photodetectors were fabricated and reported. The transmittances of 1000 Å-thick sputtering-ITO and e-beam ITO films were 78% and 67%, respectively, at a wavelength of 350 nm. The variation in the transmittance of the sputtering ITO films was not dependent on film thickness. The estimated effective barrier heights of the sputtering ITO and e-beam ITO films to GaN were 0.46 and 0.95 eV, respectively. This difference in barrier height originates from the formation of InGaN at the interface of ITO/GaN. Finally, GaN MSM photodetectors were fabricated using e-beam ITO electrodes. The peak responsivity of these e-beam ITO MSM photodetectors was 0.11 A/W at a 3 V bias. For a given bandwidth of 500 Hz, the corresponding noise equivalent power (NEP) and normalized detectivity $D^{*}$ were calculated to be $1.51\times 10^{-10}$ W and $2.96\times 10^{9}$ cmHz0.5W-1, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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TANG Jing-Jou
Department of Electronics Engineering Southern Taiwan University of Technology
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Chiou Yu-zung
Department Of Electrical Engineering National Cheng Kung University
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Tang Jing-Jou
Department of Electronics Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710, R.O.C.
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Chiou Yu-Zung
Department of Electronics Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710, R.O.C.
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