DC and Noise Characteristics of 4H-SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors

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概要

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• Nickel (Ni)/indium-tin-oxide (ITO) layers were proposed and deposited on SiC epitaxy layers using a DC sputtering system to improve the effective barrier height and transmittance. SiC-based metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors were also fabricated using Ni/ITO as contact electrodes. The leakage current of SiC MSM PDs was only 2.4 nA/mm2 even at a $-40$ V bias. With an even larger 40 V applied bias, the photocurrent-to-dark-current contrast almost reached 4 orders of magnitude. The peak of spectrum responsivity of 4H-SiC MSM photodetectors was 0.07 A/W at a 5 V bias, which corresponds to an internal quantum efficiency of 33%. Furthermore, for a given bandwidth of 500 Hz, the corresponding noise equivalent power (NEP) and normalized detectivity $D^{*}$ were calculated to be $1.33\times 10^{-10}$ W and $3.35\times 10^{9}$ cmHz0.5W-1.

• 2004-05-15

著者

• Chiou Yu-zung

  Department Of Electrical Engineering National Cheng Kung University

• Chiou Yu-Zung

  Department of Electronics Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710, ROC

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