High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer

概要

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High quality SiO2 films were successfully deposited onto AlGaN using photochemical vapor deposition (photo-CVD). The interface state density, $D_{\text{it}}$, of photo-CVD SiO2 was estimated to be only $1.1\times 10^{11}$ cm-2eV-1 at room temperature and still only $3.5\times 10^{12}$ cm-2eV-1 even at 175°C. With a 1 μm gate length, it was found that the maximum saturated drain-source current ($I_{\text{ds}}$), maximum transconductance ($g_{\text{m}}$) and gate voltage swing (GVS) of the AlGaN/GaN/AlGaN double heterostructure metal-oxide-semiconductor heterostructure field-effect-transistors (MOS-HFETs) fabricated were 755 mA/mm, 95 mS/mm and 8 V, respectively. Even at 300°C, the maximum saturated $I_{\text{ds}}$ and maximum $g_{\text{m}}$ of the MOS-HFETs fabricated were still kept at 527 mA/mm and 77 mS/mm, respectively. Furthermore, from the low frequency noise power spectrum, it was found that noise power density of the AlGaN/GaN/AlGaN double heterostructure was lower and presented pure 1/f noise with smaller trapping effects than conventional structures.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-04-15