Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
スポンサーリンク
概要
著者
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Wu San-lein
Department Of Electronic Engineering Cheng Shiu University
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Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
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Huang Po-chin
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Cheng Osbert
Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.
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Wu San-Lein
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
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Cheng Osbert
Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan
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Huang Po-Chin
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
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Wang Bo-Chin
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
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Lu Yu-Ying
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
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Huang Chien-Wei
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
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Lin Yu-Min
Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan
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Wu Chung-Yi
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
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Lee Kun-Hsien
Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan
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