Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide
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概要
- 論文の詳細を見る
A low-cost and reliable SiO2 insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H2SiF6 and H3BO3 solutions. The interface-trap density, $D_{\text{it}}$, was estimated to be $1.2\times 10^{12}$ cm-2 eV-1 for the as-grown, not annealed LPD-SiO2 layers. It was found that the leakage current density was $2.06\times 10^{-5}$ A/cm2 at a negative bias of 10 V for the as-grown Al/20 nm LPD-SiO2/GaN metal–insulator–semiconductor (MIS) capacitors. It was also found that the LPD-SiO2 layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium–tin-oxide (ITO)/LPD-SiO2/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-08-15
著者
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Hwang Jun-dar
Department Of Electrical Engineerine Da-yeh University
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Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
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Hwang Jun-Dar
Department of Electrical Engineering, Da-Yeh University, 112 Shan-Jiau Rd., Da-Tsuen, Changhua 886-510, Taiwan, R.O.C.
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Yang Gow-Huei
Department of Electrical Engineering, Da-Yeh University, 112 Shan-Jiau Rd., Da-Tsuen, Changhua 886-510, Taiwan, R.O.C.
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Lan Chih-Hsueh
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Chan Chien-Mao
Department of Electrical Engineering, Da-Yeh University, 112 Shan-Jiau Rd., Da-Tsuen, Changhua 886-510, Taiwan, R.O.C.
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Chen Hone-Zem
Department of Electrical Engineering, Hsiu-Ping Institute of Technology, No. 11, Gongye Rd., Dali City, Taichung 412-80, Taiwan, R.O.C.
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