Chang Shoou-jinn | Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

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著作論文

Two-Step Etching Mechanism of Ag-Si Nanostructure with Various Ag Nanoshape Depositions
High Brightness InGaN/GaN LEDs with ESD Protection
High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
A Novel Fabrication of p--n Diode Based on ZnO Nanowire/p-NiO Heterojunction
Crystal Polarity Effects on Magnesium Implantation into GaN Layer
Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
ZnO Nanowire-Based CO Sensors Prepared at Various Temperatures
Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film
AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads
Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes
Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
Microstructural Characteristics of InGaZnO Thin Film : Using an Electrical Current Method
GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
n-UV+Blue/Green/Red White Light Emitting Diode Lamps
Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
Effect of Substrate Properties on Luminescence of White ZnGa2O4 Phosphor
Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide
Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
High-Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition
Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates
High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates

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