Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN

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概要

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• The effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant concentration ratio and annealing conditions. This phenomenon is attributable to the reduction in self-compensation that results from the formation of deep donors and the enhanced Mg atom activation, which is in reasonable agreement with the optical properties observed by photoluminescence measurements. In addition, a new photoluminescence peak resulting from P-related transitions is also observed, evidently owing to the recombination of electrons from the shallow native donors with holes previously captured by isoelectronic P traps.

• 2009-08-25

著者

• Wu Sean

  Department Of Electrical Engineering National Cheng Kung University

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• LIU Kuan-Ting

  Department of Electrical Engineering, National Chen Kung University

• Liu Kuan-Ting

  Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengcing Road, Kaohsiung County 833, Taiwan

• Chang Shoou-Jinn

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan

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