GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer

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概要

• 論文の詳細を見る

• The electrical properties of the Si-doped n+-In0.23Ga0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shows a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 $\Omega$ to 10 $\Omega$ by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Tsai Ji-ming

  South Epitaxy Corporation

• KUO Cheng-Huang

  Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University

• Wu Liang-wen

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• SHEU Jinn-Kong

  Optical Science Center, National Central University

• Chen Jone

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• Su Yan-kuin

  Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio

• Kuo Cheng-Huang

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University Tainan 701, Taiwan

• Wu Liang-Wen

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University Tainan 701, Taiwan

• Chang Shoou-Jinn

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University Tainan 701, Taiwan

• Tsai Ji-Ming

  South Epitaxy Corporation, Hsin-Shi 744, Tainan County, Taiwan

• Chen Jone

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University Tainan 701, Taiwan

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