Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow
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概要
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The performance characteristics of InGaAsN quantum well (QW) lasers with and without trimethylantimony (TMSb) preflow have been studied. The TMSb preflow before the growth of InGaAsN QWs can suppress the Al-contamination effect and decrease the threshold current density compared with conventional InGaAsN QW lasers without preflow. The photoluminescence (PL) intensity increased and linewidth decreased when TMSb flow rate increased. According to the atomic force microscopy (AFM) measurement, the surface roughness was also reduced significantly after TMSb treatment which manifested that the preflow prevented the Al and N precursors from reacting with each other and resulted in a higher optical quality in InGaAsN QWs.
- 2011-01-25
著者
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SU Yan-Kuin
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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Chen Wei-cheng
Institute Of Microelectronics And Advanced Optoelectronic Technology Center National Cheng Kung Univ
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Su Ke-hua
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Su Yan-kuin
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Yu Hsin‐chieh
National Cheng Kung Univ. Tainan Twn
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Yu Hsin-chieh
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Huang Chun-yuan
Department Of Applied Science National Taitung University
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Chen Wei-cheng
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Wan Cheng-Tien
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Tec
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Wan Cheng-tien
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Su Yan-kuin
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Yu Hsin-chieh
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung University
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