An Improved In_<0.34>Al_<0.66>As_<0.85>Sb_<0.15>/InP Heterostructure Utilizing Coupled δ-Doping InP Channel : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-01-15
著者
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Chen Y‐w
National Cheng‐kung Univ. Tainan Twn
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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CHEN Yen-Wei
Institute of Laser Engineering, Osaka University
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Li Yih-juan
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Yen Chia-yen
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Hsu Wei-cheng
Materials Research Laboratory
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CHEN Yeong-Jia
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Chen Yeong-jia
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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YEN Yu-Shyan
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Yen Yu-shyan
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Lin Yu-shyan
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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CHEN Yen-Wei
Institute for Laser Technology
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- Observation of Burn and Pusher Regions of Laser-Driven Large-High-Aspect-Ratio Target by α-Particle Imaging
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- Analysis of Laser Beam Propagation Effects in Atomic Laser Isotope Separation
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- Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
- Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
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