Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_<1-x>As Channel

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-12-30

著者

• Lee Ching-sung

  Department Of Electronic Engineering Feng Chia University

• Hsu Wei-chou

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Chen Hsin-hung

  Department Of Electronic Engineering Feng Chia University

• Huang Dong-hai

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Hsu Wei-cheng

  Materials Research Laboratory

• HUANG Jun-Chin

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• CHEN Yeong-Jia

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

関連論文

• Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
• Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
• Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
• A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier
• Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor
• High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
• Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
• Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
• Improved Step-Graded-Channel Heterostructure Field-Effect Transistor
• Low Dark Current InGaAs(P)/InP p-i-n Photodiodes
• An Improved In_Al_As_Sb_/InP Heterostructure Utilizing Coupled δ-Doping InP Channel : Semiconductors
• An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
• Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
• Bias-Tunable Multiple-Transconductance with Improved Transport Characteristics of δ-doped In_Ga_As/GaAs/In_Ga_As/GaAs High Electron Mobility Transistor Using a Graded Superlattice Spacer
• Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In_Ga_As_N_(Sb) Dilute Channel
• Inductively Coupled Plasma Mesa Etched InGaN/GaN Light Emitting Diodes Using Cl_2/BCl_3/Ar Plasma
• Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
• Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor
• New Fabrication Process of Single-Crystalline Silicon Islands Using Double Diffusion : Application to a Heating Resistor of a Thermal Inkjet Printhead
• Investigations of $\delta$-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded InxGa1-xAs Channel
• Thermal-Stable Characteristics of Metamorphic Double $\delta$-Doped Heterostructure Field-Effect Transistor

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