Low Dark Current InGaAs(P)/InP p-i-n Photodiodes

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-07-15

著者

• Chen Y‐w

  National Cheng‐kung Univ. Tainan Twn

• Hsu Wei-chou

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• CHEN Yen-Wei

  Institute of Laser Engineering, Osaka University

• Hsu Wei-cheng

  Materials Research Laboratory

• CHEN Yeong-Jia

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• HSU Rong-Tay

  South Epitaxy Corporation

• WU Yue-Huei

  South Epitaxy Corporation

関連論文

• Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
• Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Observation of Burn and Pusher Regions of Laser-Driven Large-High-Aspect-Ratio Target by α-Particle Imaging
• Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
• An efficient method for the culture of Helicobacter pylori from gastric biopsies with two-section petri dishes
• Quantification of Helicobacter pylori infection : Simple and rapid ^C-urea breath test in Taiwan
• Electrical and Optical Characteristics of an a-Si:H/c-Si Heterojunction Switch
• Analysis of Laser Beam Propagation Effects in Atomic Laser Isotope Separation
• Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
• Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
• Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
• Improved Step-Graded-Channel Heterostructure Field-Effect Transistor
• Low Dark Current InGaAs(P)/InP p-i-n Photodiodes
• An Improved In_Al_As_Sb_/InP Heterostructure Utilizing Coupled δ-Doping InP Channel : Semiconductors
• An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
• Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
• Bias-Tunable Multiple-Transconductance with Improved Transport Characteristics of δ-doped In_Ga_As/GaAs/In_Ga_As/GaAs High Electron Mobility Transistor Using a Graded Superlattice Spacer
• Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In_Ga_As_N_(Sb) Dilute Channel
• Inductively Coupled Plasma Mesa Etched InGaN/GaN Light Emitting Diodes Using Cl_2/BCl_3/Ar Plasma
• Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
• Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor
• Low Dark Current InGaAs(P)/InP p–i–n Photodiodes
• Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As Inverse Composite Channel Metamorphic High Electron Mobility Transistor

もっと見る 閉じる

スポンサーリンク