Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In_<0.3>Ga_<0.7>As_<0.99>N_<0.01>(Sb) Dilute Channel
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Lee Ching-sung
Department Of Electronic Engineering Feng Chia University
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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SU Ke-Hua
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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Chi Jim-y
Institute Of Electro-optical Engineering National Chiao-tung University
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Su Ke-hua
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Hsiao Ru-shang
Institute Of Electro-optical Engineering National Chiao-tung University
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LIN Yu-Shyan
Department of Electrical Engineering, National Cheng Kung University
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HU Po-Jung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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CHI Tung-Wei
Institute of Electro-Optical Engineering, National Chiao-Tung University
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Hu Po-jung
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Lin Yu-shyan
Department Of Materials Science And Engineering National Dong Hwa University
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Chi Tung-wei
Institute Of Electro-optical Engineering National Chiao-tung University
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Su Ke-hua
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Lee Ching-sung
Department Of Electrical Engineering National Cheng Kung University
関連論文
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- Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
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