A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier

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概要

• 論文の詳細を見る
• 2005-08-10

著者

• Lee Ching-sung

  Department Of Electronic Engineering Feng Chia University

• Lee Cheng-shih

  Department Of Materials Science And Engineering National Chiao Tung University

• CHANG Shang-Wen

  Department of Materials Science and Engineering, National Chiao Tung University

• CHANG Edward

  Department of Materials Science and Engineering, National Chiao Tung University

• CHEN Ke-Shian

  Department of Materials Science and Engineering, National Chiao Tung University

• TSENG Chao-Wei

  Department of Materials Science and Engineering, National Chiao Tung University

• TU Yong-Ye

  Department of Materials Science and Engineering, National Chiao Tung University

• LEE Ching-Ting

  Department of Electrical Engineering, National Cheng Kung University

• Chen Ke-shian

  Department Of Materials Science And Engineering National Chiao Tung University

• Tu Yong-ye

  Department Of Materials Science And Engineering National Chiao Tung University

• Tseng Chao-wei

  Department Of Materials Science And Engineering National Chiao Tung University

• Chang Shang-wen

  Department Of Materials Science And Engineering National Chiao Tung University

• Chang S‐w

  Department Of Applied Chemistry National Chiao Tung University

• Chang Edward

  Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc

• Lee Ching-ting

  Department Of Electrical Engineering National Cheng Kung University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

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