Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper, we present the fabrication and characterization of 40 nm InAs-channel high-electron-mobility-transistor (HEMT) devices. Both DC and RF measurements were performed under various bias conditions. We have also extracted bias-dependent intrinsic device parameters to determine the optimum conditions of operation. It is concluded that a high current-gain cutoff frequency (f_{\text{T}}) of 615 GHz can be achieved when the device is biased near the occurrence of impact ionization.

• 2012-11-25

著者

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

• Kuo Chien-i

  Department Of Materials Science And Engineering National Chiao-tung University

• Chiang Che-yang

  Department Of Communications Engineering Yuan Ze University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Hsu Ching-Yi

  Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Chiang Che-Yang

  Department of Communications Engineering, Yuan Ze University, Chungli, Taiwan 32003, R.O.C.

• Hsu Heng-Tung

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan

• Miyamoto Yasuyuki

  Department of Physical Electrons, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Fatah Faiz

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

関連論文

• Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Light Emission from Quantum-Box Structure by Current Injection
• High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
• Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
• Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
• W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
• Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
• Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
• A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier
• A 1.2-V Operation Power Pseudomorphic High Electron Mobility Transistor for Personal Handy Phone Handset Application
• Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
• Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
• Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
• Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
• Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations
• A Comparison of the Microstructural Feature and Bonding Strength of Plasma-Sprayed Hydroxyapatite Coatings with Hydrothermal and Vacuum Post-Heat Treatment
• Theoretical Gain of Quantum-Well Wire Lasers
• Interfacial Characterization of Porcelain Veneered on the Pure Titanium under Vacuum Firing
• Adherence of Porcelain Veneered on Titanium with an Intermediate Plasma-Sprayed Zirconia Layer
• Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
• Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
• Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
• First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
• Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
• Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
• High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
• Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
• Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
• Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
• New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
• Crystal Growth of InP on a Gd_3Ga_5O_ Substrate by Organometallic Chemical Vapor Deposition
• Controlled Placement of Self-Organized Ge Dots on Patterned Si(001) Surfaces
• Flower-Like Distribued Self-Oranized Ge Dots on Patterned Si (001) Substrates
• A Mechanism of Porosity Distribution in A356 Aluminum Alloy Castings
• GaInAs/InP Hot Electron Transistors Grown by OMVPE
• Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
• GaInAsP/InP Single Quantum-Well Lasers by OMVPE
• Conditions for OMVPE Growth of GaInAsP/InP Crystal
• Vertical InGaAs Channel Metal--Insulator--Semiconductor Field Effect Transistor with High Current Density
• Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
• Highly Selective GaAs/Al_Ga_As Wet Etch Process for the Gate Recess of Low-Voltage-Power Pseudomorphic High-Electron-Mobility Transistor
• Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
• Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
• Novel I-Line Phase Shift Mask Technique for Submicron T-Shaped Gate Formation
• Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer
• WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors
• InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
• Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
• Observation of InP Surfaces after (NH_4)_2S_x Treatment by a Scanning Tunneling Microscope
• Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs(Semiconductor Materials and Devices)
• Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
• Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back Gate
• High-Quality 1 eV In0.3Ga0.7As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application
• V-Band Flip-Chip Assembled Gain Block Using In_Ga_As Metamorphic High-Electron-Mobility Transistor Technology
• High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
• Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
• Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO_2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
• InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
• Reduction of Output Conductance in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region
• Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In_Ga_As and In_Ga_As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
• Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
• Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
• InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
• Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
• InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate
• Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
• Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO_2 Wires
• AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers
• InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges
• New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors
• DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
• Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
• High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications
• Observation of Current Modulation through Self-Assembled Monolayer Molecule in Transistor Structure
• Growth of High-Quality Ge Epitaxial Layers on Si (100)
• Metamorphic In0.53Ga0.47As Metal–Oxide–Semiconductor Structure on a GaAs Substrate with ZrO2 High-$k$ Dielectrics
• Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
• Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases
• InP Hot Electron Transistors with a Buried Metal Gate
• Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode
• InP/InGaAs Hot Electron Transistors with Insulated Gate
• Design and Simulation of Hot-Electron Diffraction Observation Using Scanning Probe: Quantitative Evaluation of Observation Possibility
• Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing
• High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal--Insulator--Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
• Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation
• Wet Chemical Etching for Ultrafine Periodic Structure: Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth
• Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology
• Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
• High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa (Special Issue : Solid State Devices and Materials)
• Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

もっと見る 閉じる

スポンサーリンク