Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-08-25
著者
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Saito Hisashi
Department Of Physical Electronics Tokyo Institute Of Technology
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Saito Hisahi
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Furuya Kazuhito
Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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