InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

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概要

• 論文の詳細を見る

• 60 nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250 nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114 mS/mm and a current-gain cutoff frequency (f_{\text{T}}) of 710 GHz were achieved at V_{\text{DS}}=0.5 V.

• 2013-03-25

著者

• Chang Edward-yi

  Department Of Materials Science And Engineering And Microelectronics And Information System Research

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

• Kuo Chien-i

  Department Of Materials Science And Engineering National Chiao-tung University

• Chiang Che-yang

  Department Of Communications Engineering Yuan Ze University

• Hsu Heng-Tung

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan

• Chiang Che-Yang

  Department of Communications Engineering, Yuan Ze University, Chungli 32003, Taiwan, R.O.C.

• Hsu Heng-Tung

  Department of Communications Engineering, Yuan Ze University, Chungli 32003, Taiwan, R.O.C.

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