Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching

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概要

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• In this paper, we present the development of a mesa isolation process for AlSb/InAs high electron mobility transistors (HEMTs) using inductively coupled plasma (ICP) etching with BCl3 gas. Devices with different gate lengths (L_{\text{g}}: 60, 100, and 200 nm) fabricated by this dry etching technique show good DC and RF performances. With an appropriate L_{\text{g}}/gate-channel distance ratio, the 200-nm-gate has very high peak transconductances of 781 mS/mm at V_{\text{DS}} = 0.1 V and 2000 mS/mm at V_{\text{DS}} = 0.5 V. Moreover, an extrinsic current gain cutoff frequency of 137 GHz and maximum oscillation frequency of 97 GHz were achieved at a drain bias voltage V_{\text{DS}} = 0.3 V, indicating the great potential for such a device operating at high frequency with extremely low DC power consumption.

• 2012-06-25

著者

• Chyi Jen-inn

  Department Of Electrical Engineering National Central University

• Kuo Chien-i

  Department Of Materials Science And Engineering National Chiao-tung University

• Hsu Heng-tung

  Department Of Communications Engineering Yuan Ze University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Chang Edward

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Hsu Ching-Yi

  Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Yu Chia-Hui

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Ho Han-Chieh

  Department of Electrical Engineering, National Central University, Jhongli, Taiwan 32001, R.O.C.

• Hsu Heng-Tung

  Department of Communications Engineering, Yuan Ze University, Chungli, Taiwan 32003, R.O.C.

• Chyi Jen-Inn

  Department of Electrical Engineering, National Central University, Jhongli, Taiwan 32001, R.O.C.

• Hsu Heng-Tung

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan

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