Band Alignment Parameters of Al₂O₃/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文

著者

• Nguyen Minh

  Department of Agrochemistry and Microbiology, Faculty of Land and Environment, Hanoi Agricultural Un

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Lin Yueh

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

• Nguyen Minh

  Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi, Vietnam

• Trinh Hai

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

• Duong Quoc

  Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi, Vietnam

• Nguyen Hong

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

• Nguyen Hong

  Department of Electrical and Computer Engineering, Yokohama National University

• LIN Yueh

  Department of Materials Science and Engineering, National Chiao Tung University

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• Band Alignment Parameters of Al₂O₃/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
• Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures

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