Novel I-Line Phase Shift Mask Technique for Submicron T-Shaped Gate Formation
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概要
- 論文の詳細を見る
A novel submicron (<0.2 μm) T-shaped gate technology using a phase shift mask (PSM) technique is developed. The 8% half-tone PSM was selected for the definition of the isolated narrow space. Before lithography, a 2000Å SiN film was deposited on the wafer. After i-line PSM exposure and reactive ion etching (RIE) of the silicon nitride film, openings less than 0.2 μm wide were formed on the SiN film. To further reduce the dimensions of the openings, an additional 566 Å nitride was then deposited on the wafer and etched back using RIE without any mask. An opening of 0.167 μm was formed on the wafer after the dry etching process. The wafer was then coated with another layer of photoresist to form a lift-off structure. The T-shaped gate with a length of 0.167 μm was obtained using this technique. The novel T-shaped gate technology is a high-throughput process for both silicon and compound semiconductor devices.
- 社団法人応用物理学会の論文
- 2002-07-15
著者
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LAI Yeong-Lin
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Lai Yeong-lin
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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CHANG Edward
Department of Materials Science and Engineering, National Chiao Tung University
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CHEN Szu-Hung
Department of Materials Science and Engineering, National Chiao Tung University
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Chen Szu-hung
Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc
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Lai Yeong-lin
Department Of Mechanical Engineering National Changhua University Of Education
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CHANG Huang-Choung
Department of Materials Science and Engineering and Microelectronics and Information Systems Researc
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Chang Edward
Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc
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FU David
Department of Materials Science and Engineering and Microelectronics and Information Systems Researc
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CAHNG Li
Deportment of Materials Science and Engineering and Microelectronics and Information Systems Researc
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Fu David
Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc
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Cahng Li
Deportment Of Materials Science And Engineering And Microelectronics And Information Systems Researc
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Chang Huang-choung
Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc
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Chang Edward
Department Of Communications Engineering Yuan Ze University
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CHEN Szu-Hung
Department of Materials and Mineral Resources Engineering, National Taipei University of Technology
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