Investigation of Structures of Microwave Microelectromechanical-System Switches by Taguchi Method
スポンサーリンク
概要
- 論文の詳細を見る
The optimal design of microwave microelectromechanical-system (MEMS) switches by the Taguchi method is presented. The structures of the switches are analyzed and optimized in terms of the effective stiffness constant, the maximum von Mises stress, and the natural frequency in order to improve the reliability and the performance of the MEMS switches. There are four factors, each of which has three levels in the Taguchi method for the MEMS switches. An L9(34) orthogonal array is used for the matrix experiments. The characteristics of the experiments are studied by the finite-element method and the analytical method. The responses of the signal-to-noise (S/N) ratios of the characteristics of the switches are investigated. The statistical analysis of variance (ANOVA) is used to interpret the experimental results and decide the significant factors. The final optimum setting, A1B3C1D2, predicts that the effective stiffness constant is 1.06 N/m, the maximum von Mises stress is 76.9 MPa, and the natural frequency is 29.331 kHz. The corresponding switching time is 34 μs, and the pull-down voltage is 9.8 V.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-15
著者
-
Lai Yeong-lin
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
-
Lin Chien-hung
Department Of Earth Science National Cheng Kung University
-
Lai Yeong-Lin
Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan, R.O.C.
-
Lin Chien-Hung
Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan, R.O.C.
関連論文
- High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications
- A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV : Tri-Layer Resist System and Electron-Beam Lithography
- A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
- Novel I-Line Phase Shift Mask Technique for Submicron T-Shaped Gate Formation
- Fabrication of Photonic Crystals Using Nanoimprint Lithography
- Effective Prevention of Single Event Burnout for N-Channel Power MOSFETs
- Characteristics of RF MEMS Switches for Communication Systems
- Investigation of Structures of Microwave MEMS Switches
- Tracking the epicenter and the tsunami origin with GPS ionosphere observation
- Using the IRI, the MAGIC model, and the co-located ground-based GPS receivers to study ionospheric solar eclipse and storm signatures on July 22, 2009
- Investigation of Structures of Microwave Microelectromechanical-System Switches by Taguchi Method
- Impacts of Mold Geometries and Imprinted Resist Thickness on Velocity Fields for Nanoimprint Lithography
- Publisher's Note: "Characteristics of Radio-Frequency Microelectromechanical-System Switches for Communication Systems"
- Characteristics of Radio-Frequency Microelectromechanical-System Switches for Communication Systems