A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Chang C‐y
Department Of Electronics Engineering National Chiao Tung University
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Wang Sheng-ping
Hexawave Inc Hsinchu Science-based Industrial Park
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CHANG Chun-Yen
Department of Electronics Engineering, National Chiao Tung University
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Chang E‐y
National Chiao Tung Univ. Hsinchu Twn
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Chang Chun-yen
Instiute Of Electronics National Chiao-tang University
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Chang Chun-yen
Department Of The Electro-optical Engineering National Chiao Tung University
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CHANG Edward
Institute of Material Science and Engineering, National Chiao Tung University
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Lai Y‐l
National Changhua Univ. Education Changhua Twn
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LAI Yeong-Lin
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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LIU T.
Hexawave, Inc, Hsinchu Science-based Industrial Park
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WANG S.
Hexawave, Inc.
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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Lai Yeong-lin
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Chang Edward
Institute Of Material Science And Engineering National Chiao Tung University
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Chang C‐y
Department Of Electronics Engineering Nation Chiao Tung University
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