Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Chang C‐y
Department Of Electronics Engineering National Chiao Tung University
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Chang C‐s
National Tsing Hua Univ. Hsinchu Twn
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TSANG Jian-Shihn
National Nano Device Laboratories
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GUO Jan-Dar
National Nano Device Laboratories
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CHAN Shih-Hsiung
National Nano Device Laboratories
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FENG Ming-Shiann
National Chiao Tung University
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CHANG Chun-Yen
National Nano Device Laboratories
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Chan S‐h
Advanced Epitaxy Technol. Inc. Hsinchu Twn
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Chang Chun-yen
Instiute Of Electronics National Chiao-tang University
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Chang Chun-yen
Department Of The Electro-optical Engineering National Chiao Tung University
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Chan Shih-hsiung
Department Of Electrical Engineering National Cheng Kung University
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FENG Ming-Shiann
Institute of Materials Science and Engineering, National Chiao Tang Universit
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Guo J‐d
National Nano Device Laboratory
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TSANG Jian-Shihn
Advanced Epitaxy Technology Inc.
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Tsang J‐s
Advanced Epitaxy Technol. Inc. Hsinchu Twn
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Feng M‐s
Institute Of Materials Science And Engineering National Cliiao Tang University
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Chang C‐y
Department Of Electronics Engineering Nation Chiao Tung University
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Chang Chun-Yen
National Chiao Tung University, Hsinchu, Taiwan, 30050, Republic Of China
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