Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors

スポンサーリンク

概要

著者

関連論文

Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
Angle Position Detection Based on Amorphous Silicon Four Quadrant Orientation Detector
Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
Phosphorus Vacancy as a Deep Level in AlInP Layers
A Dopant-Related Defect in Te-Doped AlInP
Mg-related Deep Levels in AlInP
Device Performance Improvement Based on Transient Enhanced Diffusion Suppression in the Deep Sub-Quarter Micron Scale
Device Performances Improvement Based on TED Suppression in Deep Sub-Quarter Micron Regime
Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors
Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cells (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
Ga_In_P Barrier Layer for Wet Oxidation of AIAs
Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs

もっと見る

スポンサーリンク