Phosphorus Vacancy as a Deep Level in AlInP Layers

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関連論文

Deep Hole Teaps Created by Gamma-Ray lrradiation of GaInP : Semiconductors
Gamma-Ray Induced Deep Electron Traps in GalnP : Semiconductors
Deep Electron Trapping Centers in Te-doped (Al_x Ga_)_ In_ P (x=0.5) Layers Grown by Metal-Organic Chemical Vapor Deposition(Semiconductors)
Thermal-Treatment Induced Deep Electron Traps In AlInP : Semiconductors
Angle Position Detection Based on Amorphous Silicon Four Quadrant Orientation Detector
Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
Phosphorus Vacancy as a Deep Level in AlInP Layers
A Dopant-Related Defect in Te-Doped AlInP
Mg-related Deep Levels in AlInP
Device Performance Improvement Based on Transient Enhanced Diffusion Suppression in the Deep Sub-Quarter Micron Scale
Device Performances Improvement Based on TED Suppression in Deep Sub-Quarter Micron Regime
Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors
Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cells (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
Ga_In_P Barrier Layer for Wet Oxidation of AIAs
Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
Gamma-Ray Induced Deep Electron Traps in GaInP

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