Gamma-Ray Induced Deep Electron Traps in GaInP
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概要
- 論文の詳細を見る
Deep electron traps created by gamma-ray irradiation of Au/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinct deep electron traps, G1, G2 and G3, were observed in the irradiated GaInP samples. According to the analysis of trap properties in various samples, trap G1 is verified as a bulk defect located at 0.13 eV below the conduction band, while trap G2 and G3 are interface states originated from the junctions of Au/Te-doped GaInP contacts.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-09-15
著者
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Liu Tong-yuan
Department Of Electrophysics National Chiao Tung University
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Huang Kai-feng
Department Of Electrophysics National Chiao Tung University
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Yang Su-lin
Department Of Electrophysics National Chiao Tung University
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CHOU Fong-In
NSTDC of National Tsing Hua University
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WEI Yuan-Yaw
NSTDC of National Tsing Hua University
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WU Yu-Rue
Epistar Corporation
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Sung Wei-jer
Department Of Electrophysics National Chiao Tung University
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Tseng Tseung-yuen
Department Of Electronics Engineering & Institute Of Electronics National Chiao-tang University
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Liu Tong-Yuan
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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Huang Kai-Feng
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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Tseng Tseung-Yuen
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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