Effects of Substrate Temperature and Oxygen Partial Pressure on the Properties of Sputtered Zirconium Titanate Thin Films

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概要

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• We report the effects of substrate temperature and O_2/Ar ratios on the properties of ZrTiO_4 thin films prepared by RF magnetron sputtering. The films were deposited at a constant gas pressure (0.133 Pa) with various substrate temperatures (25-450℃) and different O_2/Ar ratios from 0/100 to 20/80. The deposition rate decreases with increasing oxygen partial pressure and substrate temperature. Moreover, the higher O_2 content increases the surface roughness of deposited films, which reduces the transmittance of the films. The effects of substrate temperature and oxygen partial pressure on the stoichiometric composition, optical constant, crystallinity phase, surface morphology, and adhesion have also been systematically investigated.

• 社団法人応用物理学会の論文
• 1995-09-15

著者

• Tseng Tseung-yuen

  Department Of Electronics Engineering National Chiao Tung University

• Chang De-an

  Department Of Electronics Engineering & Institute Of Electronics National Chiao-tang University

• LIN Pang

  Institute of Materials Science and Engineering, National Chiao Tung University

• Lin P

  National Chiao Tung Univ. Hsinchu Twn

• Lin Pang

  Institute Of Materials Science And Engineering National Chiao Tung University

• Tseng Tseung-yuen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao-tang University

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