Unipolar Resistive Switching in ZrO
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概要
- 論文の詳細を見る
Unipolar resistive switching behaviors including bistable memory switching and monostable threshold switching were found in ZrO<inf>2</inf>thin films fabricated by a simple sol--gel method with the Ti/ZrO<inf>2</inf>/Pt structure. The multilevel resistive switching behaviors were also revealed by varying the compliance current from 9 to 38 mA. Physical mechanisms based on a conductive filament model were proposed to explain the resistive switching phenomena and the device breakdown. A figure of merit Z = \rho_{\text{a}}/\rho_{\text{f}} was defined as a criterion for evaluating OFF/ON resistance ratio, where \rho_{\text{f}} and \rho_{\text{a}} represent the resistivities of the conductive filament and the fracture region of the filament, respectively. The advantages such as unipolar resistive switching, multilevel resistive switching, good scalability, low operation voltage ({<}5 V), high OFF/ON resistance ratio ({>}10^{3}), nondestructive readout, long retention ({>}10^{4} s), and simple fabrication method make the ZrO<inf>2</inf>-based resistive switching device a promising candidate for next-generation nonvolatile memory applications.
- 2013-04-25
著者
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Tseng Tseung-yuen
Department Of Electronics Engineering & Institute Of Electronics National Chiao-tang University
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Lee Dai-Ying
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Yao I-Chuan
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Zhang Guo-Yong
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Hung Chung-Jung
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Wang Sheng-Yu
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Huang Tai-Yuen
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Wu Jia-Woei
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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