Resistive Switching Properties of SrZrO3-Based Memory Films

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概要

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• The resistive switching properties of the sputter-deposited SrZrO3 (SZO) memory films were investigated in this study. The resistive switching behaviors of the SZO film can be improved by doping with vanadium oxide. The conduction mechanisms of the high and low current states of the 0.3% V-doped SZO (V:SZO) film are ohmic conduction and Frenkel–Poole emission, respectively, which implies the bulk effect of the memory film. The resistive ratio of two current states of the 0.3% V:SZO film remains 1000 times after applying 100 voltage sweeping cycles. Furthermore, the 0.3% V:SZO film shows stable resistive switching properties when measurement is performed at 100 °C. The band modulation of the SZO/LNO interface is proposed to explain the forming process of the SZO films. The 0.3% V:SZO memory film has excellent properties, such as high stability, good endurance, and long retention time, which make it a good candidate for next-generation nonvolatile memory application.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• LIN Chen-Hsi

  Winbond Electronics Corp.

• Lin Chun-chieh

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Chao-cheng

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Tu Bing-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Tseng Tseung-yuen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao-tang University

• Lin Chao-Cheng

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Tu Bing-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Yu Jung-Sheng

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Lin Chun-Chieh

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Lin Chen-Hsi

  Winbond Electronics Corporation, Hsinchu 300, Taiwan

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